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ECO-PACTM 2 IGBT Module
Short Circuit SOA Capability Square RBSOA
Preliminary Data Sheet
AC 1
X15 NTC X16 L9 F1 AC 1 IK 10
PSIG 100/12 PSIS 100/12* PSSI 100/12*
IC25 = 138 A VCES = 1200 V VCE(sat)typ. = 2.8 V
LMN S
A IJK
L9 T16 X15 NTC IK 10
PSIG 100/12 IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C Conditions TVJ = 25C to 150C
X16
PSIS 100/12*
PSSI 100/12*
*NTC optional
Maximum Ratings 1200 20 138 94 150 VCES 10 568 V V A A A s W
Features
* * * * * * * * * * * * *
VGE = 15 V; RG = 15 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 15 ; TVJ = 125C non-repetitive TC = 25C Conditions
Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL registered, E 148688
Applications
AC and DC motor control AC servo and robot drives power supplies welding inverters
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.8 3.2 4.5 3.4 6.5 5 16 320 100 50 650 50 12.1 10.5 5.5 0.44 V V V mA mA nA ns ns ns ns mJ mJ nF 0.22 K/W K/W
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH
IC = 125 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C
Advantages
Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability
VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15
VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT)
with heatsink compound (0.42 K/m.K; 50 m)
Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
Reverse diodes (FRED)
Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 75 A; TVJ = 25C TVJ = 125C IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V
with heatsink compound (0.42 K/m.K; 50 m)
Maximum Ratings 154 97 A A
Package style and outline
Dimensions in mm (1mm = 0.0394")
PSIG
Characteristic Values min. typ. max. 2.2 1.6 79 220 0.9 2.5 V V A ns 0.45 K/W K/W
Temperature Sensor NTC
Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K
PSSI
Module
Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight IISOL 1 mA; 50/60 Hz Mounting torque (M4) Max. allowable acceleration Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s 2
Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
175
A 150 IC 125
TJ = 25C
VGE=17V 15V 13V 11V
175 A 150 IC 125 100 75
TJ = 125C
VGE=17V 15V 13V 11V
100 75 50 25 0 0,0
9V
50 25
9V
121T120
0
121T120
0,5
1,0
1,5
2,0
2,5
VCE
3,0 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5 V
VCE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150 125 A
IC
VCE = 20V TJ = 25C
300 A 250 IF 200 150 100 50
121T120
TJ = 125C TJ = 25C
100 75 50 25 0
0
121T120
5
6
7
8
9
10
VGE
11 V
0,5
1,0
1,5
2,0
2,5
VF
3,0 V
3,5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
120
20
V VGE 15
VCE = 600V IC = 75A
300
ns
trr
A IRM
trr
80
200
10 40 5
IRM TJ = 125C VR = 600V IF = 75A
100
0
121T120
0
121T120
0
100
200
300
QG
400
nC
0
200
400
600
800 A/s
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
40
mJ Eon Eon td(on) tr
160 ns 120 t
20
mJ Eoff 15
Eoff td(off)
800 ns 600 t 400
30
20
80
10
VCE = 600V VGE = 15V
10
VCE = 600V VGE = 15V 40 RG = 15 TJ = 125C
121T120
5
RG = 15 200 TJ = 125C
121T120
0
0
50
100
IC
150 A
0
0
tf
0
50
100 IC
150 A
0
Fig. 7 Typ. turn on energy and switching times versus collector current
25
mJ 200 ns 160 t 120 tr 80 40 0 48 56
121T120
Fig. 8 Typ. turn off energy and switching times versus collector current
25 mJ
Eoff 2000 td(off) ns 1600 t Eoff 1200 800 400
121T120
20
Eon
VCE = 600V VGE = 15V IC = 75A TJ = 125C
td(on) Eon
20 15 10 5 0
VCE = 600V VGE = 15V IC = 75A TJ = 125C
15 10 5 0
0
8
16
24
32
40
RG
0
8
16
24
32
RG
40
0 48 56
tf
Fig. 9
Typ. turn on energy and switching times versus gate resistor
1 K/W 0,1 ZthJC 0,01
RG = 15 TJ = 125C VCEK < VCES
Fig.10 Typ. turn off energy and switching times versus gate resistor
200
A
160
ICM
120 80 40 0
121T120
diode
IGBT
0,001 0,0001
single pulse
VID...125-12P1
0
200
400
600
800 1000 1200 V VCE
0,00001 0,00001 0,0001
0,001
0,01 t
0,1
s
1
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

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